BC817RA147

BC817RA147

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BC817RA147
Bipolar Transistor Arrays
NXP Semiconductors
BC817RA - SMALL
-
Bulk


BC817RA - SMALL SIGNAL BIPOLAR T

Product parameters
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TYPEDESCRIPTION
MfrNXP Semiconductors
Series-
PackageBulk
Product StatusACTIVE
Package / Case6-XFDFN Exposed Pad
Mounting TypeSurface Mount
Transistor Type2 NPN
Operating Temperature150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition100MHz
Supplier Device PackageDFN1412-6
GradeAutomotive
QualificationAEC-Q101

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