IV1D12015T2

IV1D12015T2

  • image of Single Diodes>IV1D12015T2
  • image of Single Diodes>IV1D12015T2
Part number IV1D12015T2
Product classification Single Diodes
Manufacturer Inventchip Technology
Type DIODE SIL CARB
Encapsulation -
Packing Tube
RoHS status 1

Product advantages

DIODE SIL CARB 1.2KV 44A TO247-2

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrInventchip Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F888pF @ 1V, 1MHz
Current - Average Rectified (Io)44A
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 15 A
Current - Reverse Leakage @ Vr80 µA @ 1200 V
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