RN2118MFV(TPL3)

RN2118MFV(TPL3)

  • image of Single, Pre-Biased Bipolar Transistors>RN2118MFV(TPL3)
  • image of Single, Pre-Biased Bipolar Transistors>RN2118MFV(TPL3)
Part number RN2118MFV(TPL3)
Product classification Single, Pre-Biased Bipolar Transistors
Manufacturer Toshiba Electronic Devices and Storage Corporation
Type TRANS PREBIAS P
Encapsulation -
Packing Cut Tape (CT)
RoHS status 1

Product advantages

TRANS PREBIAS PNP 50V 0.1A VESM

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageCut Tape (CT)
Product StatusACTIVE
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Supplier Device PackageVESM
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)10 kOhms
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