TRS12V65H,LQ

TRS12V65H,LQ

  • image of Single Diodes>TRS12V65H,LQ
  • image of Single Diodes>TRS12V65H,LQ
Part number TRS12V65H,LQ
Product classification Single Diodes
Manufacturer Toshiba Electronic Devices and Storage Corporation
Type G3 SIC-SBD 650V
Encapsulation -
Packing Tape & Reel (TR)
RoHS status 1

Product advantages

G3 SIC-SBD 650V 12A DFN8X8

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case4-VSFN Exposed Pad
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F778pF @ 1V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device Package4-DFN-EP (8x8)
Operating Temperature - Junction175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 12 A
Current - Reverse Leakage @ Vr120 µA @ 650 V
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