UF3C120080K4S

UF3C120080K4S

  • image of Single FETs, MOSFETs>UF3C120080K4S
  • image of Single FETs, MOSFETs>UF3C120080K4S
Part number UF3C120080K4S
Product classification Single FETs, MOSFETs
Manufacturer UnitedSiC (Qorvo)
Type SICFET N-CH 120
Encapsulation -
Packing Tube
RoHS status 1

Product advantages

SICFET N-CH 1200V 33A TO247-4

Product parameters
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TYPEDESCRIPTION
MfrUnitedSiC (Qorvo)
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Cascode SiCJFET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 12V
Power Dissipation (Max)254.2W (Tc)
Vgs(th) (Max) @ Id6V @ 10mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
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